Memory cell, pixel structure and fabrication process of memory cell

ABSTRACT

A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 94138538, filed on Nov. 3, 2005. All disclosure of the Taiwanapplication is incorporated herein by reference.

BACKGROUND OF THE INVENTION

b 1. Field of Invention

The present invention relates to a memory cell and fabrication processthereof, and more particularly to a memory cell suitable for fabricatinga Metal-Oxide-Nitride-Oxide-Poly-Silicon (MONOS) on a substrate.

2. Description of Related Art

Since the liquid crystal display (LCD) and the organic light emittingdiode (OLED) display have the advantages of being light, thin, short,and small, they have gradually become the display for the portableterminal system. Especially, the twisted nematic liquid crystal display(TN-LCD), super twisted nematic liquid crystal display (STN-LCD), andthin film transistor liquid crystal display (TFT-LCD) have become theindispensable display products. The TFT-LCD pixel mainly includes a thinfilm transistor, a storage capacitor, and a pixel electrode. The imagedata written in each pixel is stored in the storage capacitor and isupdated frame by frame. Therefore, the power consumption of the TFT-LCDhaving this architecture is quite high.

As for most of the current portable electronic devices, the LCD is usedto display static images for most of the time, so it is unnecessary tokeep updating the image data stored in the pixel. In this case, if amemory, such as SRAM or DRAM, is embedded in each pixel, the powerconsumption of the LCD can be greatly reduced.

FIG. 1 is a circuit diagram of a conventional pixel structure. Referringto FIG. 1, a conventional pixel structure 100 for displaying a staticpicture includes a thin film transistor 110, a liquid crystal capacitor120, a memory control circuit 130, and a SRAM 140. The gate G of thethin film transistor 110 is electrically connected to the scan line SL.The source S of the thin film transistor 110 is electrically connectedto the data line DL. The drain D of the thin film transistor 110 iselectrically connected to the liquid crystal capacitor 120. In addition,the drain D of the thin film transistor 110 can be electricallyconnected to the SRAM 140 through the memory control circuit 130, suchthat the image signal input to the liquid crystal capacitor 120 from thedata line DL can be stored in the SRAM 140 through the memory controlcircuit 130.

In the circumstance of displaying static images, the SRAM 140 can keep avoltage difference between two electrodes of the liquid crystalcapacitor 120 without updating the data continuously, and thus the powerconsumption can be significantly reduced. However, the SRAM 140 iscomposed of at least four thin film transistors T1, and the memorycontrol circuit 130 is composed of at least two thin film transistorsT2. The thin film transistors Ti, T2 make the circuit layout of thepixel structure 100 quite crowded, and adversely affects the apertureratio of the pixel structure 100. Therefore, the pixel structure 100 canonly be used in the reflective LCD panel instead of the transmissive LCDpanel.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to provide a memory cellsuitable for being integrated into a low temperature poly-silicon thinfilm transistor (LTPS-TFT).

The present invention is directed to provide a pixel structure thatconsumes less power compared to the conventional pixel described above.

The present invention is directed to provide a fabrication process of amemory cell that can be integrated into a LTPS-TFT fabrication process.

As embodied and broadly described herein, the present invention providesa memory cell is provided, which is suitable for being disposed on asubstrate. The memory cell comprises a poly-silicon island, a firstdielectric layer, a trapping layer, a second dielectric layer, and acontrol gate. The poly-silicon island is disposed on the substrate andincludes a source region, a drain region and a channel region locatedbetween the source and drain regions, wherein the channel regioncomprises a plurality of regularly arranged tips on its surface. Thefirst dielectric layer is disposed on the poly-silicon island. Thetrapping layer is disposed on the first dielectric layer. The seconddielectric layer is disposed on the trapping layer. And, the controlgate is disposed on the second dielectric layer.

As embodied and broadly described herein, the present invention providesa pixel structure suitable for being electrically connected to a scanline and a data line is provided. The pixel structure includes an activedevice, a pixel electrode, a control circuit, and one or more memorycells described above (such as, single memory cell or a memory cellarray). The pixel electrode is electrically connected to the scan lineand the data line through the active device. The memory cell iselectrically connected between the control circuit and the pixelelectrode. The active device can be, for example, a thin filmtransistor. The control circuit can be composed of, for example, one ormore thin film transistors.

In an embodiment of the present invention, the material of the firstdielectric layer comprises silicon dioxide. The material of the trappinglayer comprises silicon nitride. The material of the second dielectriclayer comprises silicon dioxide.

In an embodiment of the present invention, the control gate is disposedover the channel region. In another embodiment of the present invention,the control gate is disposed over the channel region, a part of thesource region and a part of the drain region.

In an embodiment of the present invention, the poly-silicon islandfurther includes a charge induced doped region located between thechannel region and the drain region and below the control gate. Inaddition, the width of the charge induced doped region is smaller thanor equal to that of the channel region. The source region and the drainregion is a N-type doped region, and the charge induced doped region is,for example, a P-type doped region.

In an embodiment of the present invention, the memory cell may furtherinclude a buffer layer sandwiched between the substrate and thepoly-silicon island.

In an embodiment of the present invention, the memory cell furtherincludes a source contact metal and a drain contact metal, wherein thesource contact metal is electrically connected to the source region, andthe drain contact metal is electrically connected to the drain region.

In an embodiment of the present invention, the tips of the channelregion mentioned above are arranged in a row parallel to the extendingdirection of the control gate.

In an embodiment of the present invention, the tips of the channelregion mentioned above include plurality of first tips arranged in a rowparallel to the extending direction of the control gate, and a pluralityof second tips arranged in a row parallel to the extending direction ofthe control gate, wherein the first tips are closer to the sourceregion, and the second tips are closer to the drain region.

As embodied and broadly described herein, the present invention providesa method for fabricating a memory cell is provided. First, apoly-silicon island is formed on a substrate including a source region,a drain region, and a channel region located between the source anddrain regions. The channel region comprises a plurality of regularlyarranged tips on its surface. Next, a first dielectric layer, a trappinglayer, and a second dielectric layer are sequentially formed on thepoly-silicon island. Finally, a control gate is formed on the seconddielectric layer.

In an embodiment of the present invention, the step of forming thepoly-silicon island includes the following steps. First, an amorphoussilicon layer is formed on a substrate. Next, the amorphous siliconlayer is re-crystallized into a poly-silicon layer with a plurality ofregularly arranged tips by using the sequential laterally solidified lowtemperature poly-silicon technology (SLS-LTPS technology). Finally, thepoly-silicon layer is patterned and doped to form a source region, adrain region and a channel region in the poly-silicon layer. The methodfor forming the source region and the drain region comprises, forexample, an ion implantation method using N-type dopants.

In an embodiment of the present invention, a charge induced doped regionis further formed between the channel region and the drain region,wherein the charge induced doped region is located below the controlgate.

In an embodiment of the present invention, the step of forming a chargeinduced doped region comprises, for example, implanting P-type dopantsinto the poly-silicon layer.

In an embodiment of the present invention, a buffer layer is furtherformed between the substrate and the poly-silicon island.

In an embodiment of the present invention, a source contact metal and adrain contact metal are further formed, wherein the source contact metalis electrically connected to the source region, and the drain contactmetal is electrically connected to the drain region.

In order to the make the aforementioned and other objects, features andadvantages of the present invention comprehensible, a preferredembodiment accompanied with figures is described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a conventional pixel structure.

FIG. 2 is a circuit diagram of a pixel structure according to thepresent invention.

FIGS. 3A and 3B are schematic views of a memory cell according to thefirst embodiment of the present invention.

FIGS. 4A to 4E are schematic views illustrating the process steps of thefabrication of the memory cell shown in FIG. 3A.

FIGS. 5A and 5B are schematic views of a memory cell according to thesecond embodiment of the present invention.

FIGS. 6A to 6E are schematic views illustrating the process steps of thefabrication of the memory cell shown in FIG. 5A.

FIGS. 7A, 7B, and 7C are schematic views of a memory cell according tothe third embodiment of the present invention.

FIGS. 8A to 8E are schematic views illustrating the process steps of thefabrication of the memory cell shown in FIG. 7A.

FIGS. 9A and 9B are schematic views of a memory cell according to thefourth embodiment of the present invention.

FIGS. 10A and 10B are schematic views of a memory cell according to thefifth embodiment of the present invention.

FIGS. 11A, 11B, and 11C are schematic views of a memory cell accordingto the sixth embodiment of the present invention.

FIGS. 12A and 12B show the FN programming properties and FN erasingcharacteristics of the memory cell according to the present invention.

FIGS. 13A and 13B show the CHE programming properties and BBHH erasingcharacteristics of the memory cell according to the present invention.

DESCRIPTION OF EMBODIMENTS

FIG. 2 is a circuit diagram of a pixel structure according to thepresent invention. Referring to FIG. 2, a pixel structure 200 of thepresent invention is suitable for being electrically connected to a scanline SL and a data line DL, and includes an active device 210, a pixelelectrode 220, a control circuit 230, and a memory cell 240. The pixelelectrode 220 is electrically connected to the scan line SL and the dataline DL through the active device 210. The memory cell 240 iselectrically connected between the control circuit 230 and the pixelelectrode 220. In the present invention, the active device 210 is, forexample, a thin film transistor. The control circuit 230 is composed of,for example, one or more thin film transistors. The memory cell 240 is,for example, a single memory cell or a memory cell array in any form.

As shown in FIG. 2, the pixel electrode 220 electrically connected tothe active device 210 is usually disposed below the substrate (such as,a color filter), and a liquid crystal layer fills between the pixelelectrode 220 and the common electrode COM, such that the pixelelectrode 220, a common electrode COM coupled to the voltage VCOM, andthe liquid crystal layer sandwiched therebetween forms a liquid crystalcapacitor CLC.

Also referring to FIG. 2, besides the thin film transistor T, thecontrol circuit 230 further includes control lines 232 and 234, whereinthe control line 232 is electrically connected to the gate of the thinfilm transistor T, and the control line 234 is electrically connected tothe source of the thin film transistor T. The drain of the thin filmtransistor T is electrically connected to the memory cell 240.

As shown in FIG. 2, when a high voltage VGH is applied to the scan lineSL, the active device 210 is turned on, and meanwhile, the image dataVDATA is written to the pixel electrode 220 through the data line DL andthe active device 210. When the image data VDATA is written to the pixelelectrode 220, under control of the control line 323, control line 324,and the thin film transistor T, the memory cell 240 is in the state thatit can be written, and thus the image data VDATA can also be stored inthe memory cell 240 through the data line. On the other hand, when thepixel structure 200 is used for displaying the static images, thevoltage level of the pixel electrode 220 can be maintained by the imagedata VDATA stored in the memory cell 240. In other words, under thecontrol of the control line 323, the control line 324, and the thin filmtransistor T, the voltage level of the pixel electrode 220 is the sameas that of the image data VDATA, avoiding the deterioration of the imagequality. Therefore, it is not necessary to update the data frame byframe through the scan line SL and the data line DL in the presentinvention.

Several memory cells are illustrated with reference to the embodimentsbelow in the present invention. Since the Oxide-Nitride-Oxide isintegrated into the low temperature poly-silicon thin film transistor inthe present invention, all of the memory cells illustrated in thepresent invention can be integrated into the fabrication process of thecurrent low temperature poly-silicon thin film transistor. In otherwords, when the voltage applied to the control gate is not sufficient tocarry out programming or erasing operation, the memory cell structuredescribed below can also act as the thin film transistor.

FIRST EMBODIMENT

FIGS. 3A and 3B are schematic views of a memory cell according to thefirst embodiment of the present invention. Referring to FIG. 3A, amemory cell 300 in the embodiment is suitable for being disposed on asubstrate A, for example, a glass substrate or other transparentsubstrates. The memory cell 300 of the first embodiment includes apoly-silicon island 310, a first dielectric layer 320, a trapping layer330, a second dielectric layer 340, and a control gate 350. Thepoly-silicon island 310 is disposed on the substrate A and includes asource region 312, a drain region 314, and a channel region 316 locatedbetween the source region 312 and the drain region 314, wherein thechannel region 316 comprises a plurality of regularly arranged tips 316a on its surface. The first dielectric layer 320 is disposed on thepoly-silicon island 310. The trapping layer 330 is disposed on the firstdielectric layer 320. The second dielectric layer 340 is disposed on thetrapping layer 330. The control gate 350 is disposed on the seconddielectric layer 340. Each of the components of the memory cell 300 isillustrated in detail below.

In this embodiment, the source region 312 and the drain region 314 ofthe poly-silicon island 310 comprises N-type dopants (N+) in highconcentration, and the channel region 316 of the poly-silicon island 310comprises N-type dopants (N-) in low concentration. Taking the memorycell 300 capable of storing 1-bit as an example, the tips 316 a of thechannel region 316 are arranged in a row parallel to the extendingdirection of the control gate 350 (shown in FIG. 3B). As shown FIG. 3B,the tips 316 a of the channel region 316 are arranged regularly betweenthe source region 312 and the drain region 314, with an approximatelyequal distance (L/2) from the source region 312 and the drain region314. In a preferred embodiment of the present invention, the height ofthe tips 316 a of the channel region 316 is in a range of, for example,about 50 nm to about 80 nm. It should be noted that, the range of heightmentioned above is not used to limit the scope of the present invention,but any of those skilled in the art can adjust the height of the tips316 a of the channel region 316 depending on the design requirements.

In this embodiment, the first dielectric layer 320 is regarded as acharge tunneling layer. The material of the first dielectric layer 320comprises, for example, silicon dioxide, or any other dielectricmaterials capable of serving as a tunneling layer. The thickness of thefirst dielectric layer 320 is about 150 Å. The trapping layer 330 isadopted for storing charges. The material of the trapping layer 330comprises, for example, silicon nitride or any other film capable oftrapping charges. The thickness of the trapping layer 330 is, forexample, about 250 Å. In addition, the second dielectric layer 340 is asadopted for blocking charges. The material of the second dielectriclayer 340 comprises, for example, silicon dioxide or any otherdielectric material capable of resisting the injected charges. Thethickness of the second dielectric layer 340 is, for example, about 300Å.

As shown in FIG. 3A, to avoid the impurities in the substrate A fromdiffusing into the poly-silicon island 310, the memory cell 300 in theembodiment further includes a buffer layer 360 sandwiched between thesubstrate A and the poly-silicon island 310. The buffer layer 360comprises, for example, a silicon nitride film or any other film capableof blocking impurities.

Referring to FIG. 3A, a protective layer 370 is formed to cover thepoly-silicon island 310, the first dielectric layer 320, the trappinglayer 330, the second dielectric layer 340, and the control gate 350 inorder to enhance the reliability of the memory cell 300. The material ofthe protective layer 370 comprises, for example, silicon oxide orsilicon nitride, or combination thereof.

It should be noted that, to apply a voltage to the source region 312 anddrain region 314, the memory cell 300 further comprises a source contactmetal 380 electrically connected to the source region 312 and a draincontact metal 390 electrically connected to the drain region 316. Moreparticularly, the source contact metal 380 and the drain contact metal390 are disposed in the contact window C1 and C2 formed in the firstdielectric layer 320, the trapping layer 330, the second dielectriclayer 340, and the protective layer 370 respectively. Thus, the sourcecontact metal 380 is electrically connected to the source region 312through the contact window C1, and the drain contact metal 390 iselectrically connected to the drain region 316 through the contactwindow C2.

As shown in FIGS. 3A and 3B, the control gate 350 is located above thechannel region 316, and the control gate 350 is not overlapped with thesource region 312 and the drain region 316. In other words, the width W1of the control gate 350 in this embodiment is substantially the same asthe length L of the channel region 316.

It should be noted that, the poly-silicon island 310, the firstdielectric layer 320, the trapping layer 330, the second dielectriclayer 340, and the control gate 350 mentioned above constitutes anoperable memory cell. The buffer layer 360, the protective layer 370,the source contact metal 380, and the drain contact metal 390 areoptional components. Therefore, those skilled in the art may include oromit, or make modifications to those components with reference to thespecification, without departing from the scope of the presentinvention.

For programming the memory cell 300, a high voltage (for example, 40volts) is applied to the control gate 350. As a result, the control gate350 attracts the electrons from the channel region 316 causing theelectrons to tunnel through the first dielectric layer 320 into thetrapping layer 330 where the electrons get trapped. On the other hand,for erasing the memory cell 330, a low voltage (for example, −20 volts)is applied on the control gate 350. As a result the control gate 350exerts a repulsive force to push the electrons out of the trapping layer330 or attracts holes from the channel region 316 causing the holes totunnel through the first dielectric layer 320 into the trapping layer330 where the holes recombines with the electrons previously trapped inthe trapping layer 330. It should be noted that, because the channelregion 316 comprises a plurality of regularly arranged tips 316 a on itssurface, comparatively lower voltage is required for programming orerasing the memory cell 330. Furthermore, the operation speed of thememory cell 300 can be further enhanced.

FIGS. 4A to 4E are schematic views illustrating the process steps of thefabrication of the memory cell shown in FIG. 3. Referring to FIG. 4A, asubstrate A is provided, and an amorphous silicon layer 310 a is formedon the substrate A. In this embodiment, the amorphous silicon layer 310a is formed by performing a chemical vapor deposition (CVD) process. Itshould be noted that, a buffer layer (not shown) can be optionallyformed before forming the amorphous silicon layer 310 a in order toblock the impurities to diffuse from the substrate A.

Referring to FIG. 4B, the amorphous silicon layer 310 a is melted andre-crystallized to form a poly-silicon layer 310 b comprising aplurality of regularly arranged tips 316 a on its surface. For example,the re-crystallization of the amorphous silicon layer 310 a may beaccomplished using the SLS-LTPS technology.

Referring to FIG. 4C, the poly-silicon layer 310 b is patterned, andthen the patterned poly-silicon layer 310 b is doped to form a sourceregion 312 and a drain region 314. Thus, a poly-silicon island 310comprising the source region 312, the drain region 314 and the channelregion 316 is formed.

Referring to FIG. 4D, a first dielectric layer 320, a trapping layer 330and a second dielectric layer 340 are sequentially formed on thepoly-silicon island 310. In this embodiment, the first dielectric layer320, the trapping layer 330 and the second dielectric layer 340 areformed by using, for example, the CVD process.

Referring to FIG. 4E, a control gate 350 is formed on the seconddielectric layer 340. Next, the first dielectric layer 320, the trappinglayer 330 and the second dielectric layer 340 are patterned to expose aportion of the source region 312 and the drain region 314. Finally, asource contact metal 380 and a drain contact metal 390 are respectivelyformed on the exposed source region 312 and drain region 341.

It should be noted that, a protective layer (not shown) may be formed tocover the control gate 350 before the first dielectric layer 320, thetrapping layer 330, and the second dielectric layer 340 are patterned.

SECOND EMBODIMENT

FIGS. 5A and 5B are schematic views of the memory cell according to thesecond embodiment of the present invention. Referring to FIGS. 5A and5B, the memory cell 300′ of this embodiment is similar to that of thefirst embodiment described above, except that the control gate 350′ inthis embodiment is located above a portion of the source region 312, anda portion of the drain region 314 and the channel region 316. In otherwords, the width W2 of the control gate 350′ of this embodiment islarger than the length L of the channel region 316.

As for the memory cell 300′ of this embodiment, because the control gate350′ partially overlaps on the source region 312 and the drain region314, and the concentration of the dopants in the source region 312 andthe drain region 314 is higher than that of the channel region 316, thememory cell 300′ has a better programming and erasing capabilitiescompared to the memory cell 300 of the first embodiment.

FIGS. 6A to 6E are schematic views illustrating the process steps of thefabrication of the memory cell shown in FIG. 5A. Referring to FIGS. 6Aand 6E, the fabrication process of the memory cell 300′ of thisembodiment is similar to that of the first embodiment, except that thewidth W2 of the control gate 350′ (shown in FIG. 6E) is larger than thelength L of the channel region 316.

THIRD EMBODIMENT

FIGS. 7A, 7B and 7C are schematic views of the memory cell according tothe third embodiment of the present invention. Referring to FIGS. 7A,7B, and 7C, the memory cell 300″ of this embodiment is similar to thatof the first embodiment except that the poly-silicon island 310 furthercomprises a charge induced doped region 318 located between the channelregion 316 and the drain region 314, and a charge induced doped region318 located below the control gate 350′.

As shown in FIGS. 7B and 7C, the width W3 of the charge induced dopedregion 318 is smaller than the width W4 of the channel region 316 (shownin FIG. 7B), or identical to the width W4 of the channel region 316(shown in FIG. 7C). The charge induced doped region 318 is, for example,P-type doped region. It should be noted that, since the charge induceddoped region 318 is P-type doped region, and the drain region 314 isN-type doped region, a P-N junction between the charge induced dopedregion 318 and the drain region 314 provide the memory cell 300″ have abetter programming and erasing capabilities.

FIGS. 8A to 8E are schematic views of process steps of the fabricationof the memory cell shown in FIG. 7A. Referring to FIGS. 8A to 8E, thefabrication process of the memory cell 300″ of this embodiment issimilar to that of the second embodiment except that a charge induceddoped region 318 (as shown in FIG. 8E) is formed between the channelregion 316 and the drain region 314.

FOURTH EMBODIMENT

FIGS. 9A and 9B are schematic views of a memory cell according to thefourth embodiment of the present invention. Referring to FIGS. 9A and9B, the memory cell 400 is similar to that of the first embodimentexcept that in the memory cell 400 of this embodiment, the channelregion 316 comprises a plurality of first tips 316 a′ arranged in a rowparallel to the extending direction of the control gate 350, and aplurality of second tips 316 a″ arranged in a row parallel to theextending direction of the control gate 350, wherein the first tips 316a′ are closer to the source region 312 and the second tips 316 a″ arecloser to the drain region 314. The memory cell 400 of this embodimentis capable of storing 2-bit data.

FIFTH EMBODIMENT

FIGS. 10A and 10B are schematic views of a memory cell according to thefifth embodiment. Referring to FIGS. 10A and 10B, the memory cell 400′of this embodiment is similar to that of the second embodiment exceptthat in the memory cell 400′ of this embodiment, the channel region 316comprises a plurality of first tips 316 a′ arranged in a row parallel tothe extending direction of the control gate 350 and a plurality ofsecond tips 316 a″ arranged in a column parallel to the extendingdirection of the control gate 350 on the surface, wherein the first tips316 a′ are closer to the source d region 312, and the second tips 316″are closer to the drain region 314.

SIXTH EMBODIMENT

FIGS. 11A, 11B, and 11C are schematic views of a memory cell accordingto the sixth embodiment of the present invention. Referring to FIGS.11A, 11B, and 11C, the memory cell 400″ of this embodiment is similar tothat of the third embodiment except that in the memory cell 400″ of thisembodiment, the channel region 316 comprises a plurality of first tips316 a′ arranged in a row parallel to the extending direction of thecontrol gate 350 and a plurality of second tips 316 a″ arranged in a rowparallel to the extending direction of the control gate 350, wherein thefirst tips 316 a′ are closer to the source region 312 and the secondtips 316 a″ are closer to the drain region 314.

According to an embodiment of the present invention, the poly-siliconlayer is formed on the glass substrate by using SLS-LTPS technology suchthat the tips are formed at the grain boundary. Since the positions ofthe tips can be effectively controlled through the SLS-LTPS technology,the tips on the poly-silicon layer can be easily aligned with othercomponents in the memory cell, and therefore the problems due tomis-alignment can be effectively reduced.

According to an embodiment of the present invention, the grain size ofthe poly-silicon layer is about 3.5 μm and the height of the tips at thegrain boundary is about 80 nm. The first dielectric layer comprises asilicon dioxide layer and has a thickness of about 150 nm. The trappinglayer comprises a silicon nitride layer and a thickness of about 250 nm.The second dielectric layer comprises a silicon dioxide layer and has athickness of about 300 nm. The source/drain region is with As ions. Thecontrol gate comprises an MoW layer (formed by sputtering) and has athickness of about 300 nm. Furthermore, the length of the channel regionis about 3 μm and the width of the channel region is about 3.5 μm. Theportion of the source/drain region overlapped by the control gate isabout 1 μm.

FIGS. 12A and 12B shows Fowler-Nordheim (FN) programming andFowler-Nordheim (FN) erasing characteristics of the memory cellaccording to an embodiment of the present invention. As shown FIG. 12A,in a conventional memory cell (without silicon tips), when a voltage of30 volts is applied to the control gate to program the memory cell, theproblem of threshold voltage shift does not occur but the programmingspeed is substantially slow. As shown in FIG. 12A, even when a voltageof 40 volts is applied to the control gate, the programming speed of thememory cell is still substantially slow. To the contrary, the thresholdvoltage shift of the memory cell of the present invention (with silicontips) is about 2 volts, and the programming speed faster than that ofthe conventional memory.

Next, referring to FIG. 12B, in the memory cell (with silicon tips) ofthe present invention, when a voltage of about −30 volts or −40 volts isapplied to the control gate to carry out the FN erasing action, theerasing action can be completed within 100 ms. It should be noted thatthe silicon tips regularly arranged on the surface of the channel regionmay effectively enhance the FN programming/erasing properties of thememory cell.

For further reducing the operation voltage of the memory cell, thememory cell of the present invention proposes programming action throughthe channel hot electron (CHE) and erasing action through theband-to-and hot hole (BBHH).

FIGS. 13A and 13B illustrate the CHE programming and BBHH erasingproperties of the memory cell of the present invention. As shown FIG.13A, when a voltage of 18 volts is applied to the control gate, and avoltage of 12 volts is applied to the drain region (with the programmingtime of 10 ms), the programming threshold voltage window of the memorycell is 2.22 volts. It should be noted that the silicon tips formed onthe surface of the channel region may effectively enhance both theinjection rate of the hot electrons and the programming speed of thememory cell.

Next referring to FIG. 13B, when a voltage of 8 volts is applied to thecontrol gate, and a voltage of 20 volts is applied to the drain region(with the programming time of 10 ms), the erasing threshold voltagewindow of the memory cell operated through the BBHH is 2.44 volts. Onthe other hand, when a voltage of 30 volts is applied to the controlgate, the erasing threshold voltage window of the memory cell operatedthrough FN is 0.56 volts. It should be noted that compared with thememory cell operated through the FN, the memory cell operated throughthe BBHH has a higher erasing speed, a larger erasing threshold voltagewindow, and a lower operation voltage.

In view of the above, the present invention has the followingadvantages.

1. The pixel structure with an embedded memory cell fabricated accordingto the present invention can be integrated into the fabrication processof the LTPS LCD panel.

2. The memory cell of the present invention is suitable for thetransmissive, reflective, and transflective LTPS LCD panel, without theproblem of lower aperture ratio.

3. The number of thin film transistors required in the pixel structureis significantly reduced, thereby further improving the aperture ratio.

4. The pixel structure of the present invention is suitable fordisplaying static images, and when displaying static images, the powerconsumption is comparatively lower.

5. As the channel region comprises regularly arranged tips on itssurface, not only a lower operation voltage is required for operatingthe memory and but also the operation speed of the memory device isincreased.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1. A memory cell suitable for being disposed on a substrate, comprising:a poly-silicon island, disposed on the substrate, wherein thepoly-silicon island comprises a source region, a drain region and achannel region located between the source and drain regions, and thechannel region comprises a plurality of regularly arranged tips formedon its surface; a first dielectric layer, disposed on the poly-siliconisland; a trapping layer, disposed on the first dielectric layer; asecond dielectric layer, disposed on the trapping layer; and a controlgate, disposed on the second dielectric layer.
 2. The memory cell asclaimed in claim 1, wherein the first and second dielectric layerscomprise silicon dioxide and the trapping layer comprises siliconnitride.
 3. The memory cell as claimed in claim 1, wherein the controlgate is located above the channel region.
 4. The memory cell as claimedin claim 1, wherein the control gate is disposed over the channelregion, a portion of the source region and a portion of the drainregion.
 5. The memory cell as claimed in claim 1, wherein thepoly-silicon island further comprises a charge induced doped regionlocated between the channel region and the drain region, and wherein thecharge induced doped region is located below the control gate.
 6. Thememory cell as claimed in claim 5, wherein a width of the charge induceddoped region is smaller than or equal to that of the channel region. 7.The memory cell as claimed in claim 5, wherein the source region and thedrain region is N-type doped region, and the charge induced doped regionis P-type doped region.
 8. The memory cell as claimed in claim 1,further comprising a buffer layer disposed between the substrate and thepoly-silicon island.
 9. The memory cell as claimed in claim 1, furthercomprising: a source contact metal, electrically connected to the sourceregion, and a drain contact metal, electrically connected to the drainregion.
 10. The memory cell as claimed in claim 1, wherein the regularlyarranged tips of the channel region are arranged in a row parallel to anextending direction of the control gate.
 11. The memory cell as claimedin claim 1, wherein the regularly arranged tips of the channel regioncomprises: a plurality of first tips, arranged in a row parallel to anextending direction of the control gate; and a plurality of second tips,arranged in a row parallel to the extending direction of the controlgate, wherein the first tips are closer to the source region, and thesecond tips are closer to the drain region.
 12. A pixel structuresuitable for being connected to a scan line and a data line, comprising:an active device; a pixel electrode, electrically connected to the scanline and the data line through the active device; a control circuit; anda memory cell, electrically connected between the control circuit andthe pixel electrode, wherein the memory cell comprises: a poly-siliconisland, disposed on the substrate, wherein the poly-silicon islandcomprises a source region, a drain region and a channel region locatedbetween the source and drain regions, and the channel region comprises aplurality of regularly arranged tips on its surface; a first dielectriclayer, disposed on the poly-silicon island; a trapping layer, disposedon the first dielectric layer; a second dielectric layer, disposed onthe trapping layer; and a control gate, disposed on the seconddielectric layer.
 13. The pixel structure as claimed in claim 12,wherein the active device comprises a thin film transistor.
 14. Thepixel structure as claimed in claim 12, wherein the control circuitcomprises a thin film transistor.
 15. The pixel structure as claimed inclaim 12, wherein the first and second dielectric layers comprisesilicon dioxide layers respectively and the trapping layer comprises asilicon nitride layer.
 16. The pixel structure as claimed in claim 12,wherein the control gate is located above the channel region.
 17. Thepixel structure as claimed in claim 12, wherein the control gate isdisposed over the channel region, a portion of the source region and aportion of the drain region.
 18. The pixel structure as claimed in claim12, wherein the poly-silicon island further comprises a charge induceddoped region located between the channel region and the drain region,and wherein the charge induce doped region is located below the controlgate.
 19. The pixel structure as claimed in claim 18, wherein a width ofthe charge induced doped region is smaller than or equal to that of thechannel region.
 20. The pixel structure as claimed in claim 18, whereinthe source region and the drain region is N-type doped region, and thecharge induced doped region is P-type doped region.
 21. The pixelstructure as claimed in claim 12, further comprising a buffer layer,disposed between the substrate and the poly-silicon island.
 22. Thepixel structure as claimed in claim 12, further comprising: a sourcecontact metal, electrically connected to the source region; and a draincontact metal, electrically connected to the drain region.
 23. The pixelstructure as claimed in claim 12, wherein the regularly arranged tipsare arranged in a row parallel to the extending direction of the controlgate.
 24. The pixel structure as claimed in claim 12, wherein theregularly arranged tips comprise: a plurality of first tips, arranged ina row parallel to the extending direction of the control gate; and aplurality of second tips, arranged in a row parallel to the extendingdirection of the control gate, wherein the first tips are closer to thesource region, and the second tips are closer to the drain region.
 25. Amethod of fabricating a memory cell, comprising: forming a poly-siliconisland on a substrate, wherein the poly-silicon island comprises asource region, a drain region and a channel region located between thesource and drain regions, and the channel region comprises a pluralityof regularly arranged tips on its surface; sequentially forming a firstdielectric layer, a trapping layer and a second dielectric layer on thepoly-silicon island; and forming a control gate on the second dielectriclayer.
 26. The method of fabricating a memory cell as claimed in claim25, wherein the step of forming the poly-silicon island comprises:forming an amorphous silicon layer on the substrate; re-crystallizingthe amorphous silicon layer into a poly-silicon layer having regularlyarranged tips thereon using a sequential laterally solidified lowtemperature poly-silicon technology; patterning the poly-silicon layer;and doping the poly-silicon layer to form the source region, the drainregion and the channel region.
 27. The method of fabricating a memorycell as claimed in claim 25, wherein the step of forming the sourceregion and the drain region comprises implanting N-type dopants into thepoly-silicon layer.
 28. The method of fabricating a memory cell asclaimed in claim 25, further comprising a step of forming a chargeinduced doped region between the channel region and the drain region,wherein the charge induced doped region is located below the controlgate.
 29. The method of fabricating a memory cell as claimed in claim28, wherein the step of forming the charge induced doped regioncomprises implanting P-type dopants into the poly-silicon layer.
 30. Themethod of fabricating a memory cell as claimed in claim 25, furthercomprising a step of forming a buffer layer between the substrate andthe poly-silicon island.
 31. The method of fabricating a memory cell asclaimed in claim 25, further comprising: forming a source contact metaland a drain contacting metal, wherein the source contact metal iselectrically connected to the source region, and the drain contact metalis electrically connected to the drain region.